Shanghai, China – June 10, 2026 – onsemi (NASDAQ: ON) has announced the launch of its brand-new GaNEXUS™ gallium nitride (GaN) power product portfolio, engineered to deliver superior energy efficiency, higher power density and optimized thermal performance for AI data centers, industrial automation, robotics, energy infrastructure and other high-power applications.
The initial product samples cover GaNEXUS FETs spanning a 40V to 650V voltage range, including the GaNEXUS Smart 650V GaN FET with integrated protection features, which streamlines system integration and boosts overall equipment reliability.
Key News Highlights
- The GaNEXUS portfolio enables faster switching speeds, lower switching losses, higher power density and improved thermal performance for next-generation power architectures.
- Sampling is now available for GaNEXUS FETs from 40V to 650V, plus the protected integrated GaNEXUS Smart 650V GaN FET.
- Paired with onsemi’s Treo platform that integrates sensing, control, protection and power management functions, GaNEXUS delivers smarter, more robust system-level power solutions.
- Combined with onsemi’s silicon and EliteSiC technologies, GaNEXUS grants customers greater flexibility to optimize energy efficiency, thermal performance, system footprint and total cost across the entire power conversion chain.
Significance of GaNEXUS GaN Devices
Driven by rapid expansion of AI infrastructure, vehicle electrification, industrial automation and renewable energy systems, power design engineers face mounting challenges around energy consumption, thermal management and compact form factors.
Compared with traditional silicon-based power solutions, GaNEXUS effectively addresses these pain points by offering faster switching and reduced switching losses, delivering higher power density and better thermal behavior. Designers can shrink the size of magnetics and cooling subsystems, raise overall system efficiency and response speed, and cut down total system costs for AI rack power, EV chargers, industrial motor drives and more.
Antoine Jalabert, Vice President of the GaN Business Unit at onsemi, commented: “Our GaNEXUS portfolio is advancing power system design into a new architectural era. As customers pursue greater power output within smaller enclosures, GaNEXUS empowers engineers to break the limitations of conventional silicon power topologies.”
Technical Performance & Advantages
GaNEXUS is fully optimized for power conversion and power management in modern industrial and AI hardware. When combined with the Treo all-in-one control platform, it forms a complete system-level power solution that reduces design complexity, accelerates product development and certification, lowers cooling requirements and maximizes overall performance.
1. Low & Medium-Voltage Applications (48V IBC for AI Servers, BBU, Motor Drives)
- Magnetic component size reduced by 30%–60%
- Power density improved by 1.5–2 times
- System efficiency increased by 0.5%–2% (varies by topology)
- Lower switching losses deliver better thermal performance and control stability
2. High-Voltage Applications (AI Power Racks, High-Voltage DC-DC, PFC & LLC Stages)
- Magnetics footprint reduced by up to 60% in high-frequency AC-DC and resonant circuits
- Power density boosted 1.5–2x for PFC, LLC and high-voltage DC-DC architectures
- 0.5%–1% efficiency gain, drastically cutting thermal stress and operational expenses for mass deployment
- GaNEXUS Smart minimizes system risks, simplifies power-stage design, speeds up certification and enhances long-term reliability
All GaNEXUS devices feature thermally enhanced packages with industry-standard pinouts and dual-sourcing support, including TOLL bottom-cooled, TOLT top-cooled, plus double-sided cooling packages measuring 3.3mm×3.3mm and 5mm×6mm to fit diverse compact high-power designs.